10 single ended s02 40.0 2.0 50.0 1.80 c/w 36 1.7 13.00 2.0 55 0.40 8.00 8.0 80 0.20 36 parameter symbol min typ max units test conditions common source power gain drain efficiency total device dissipation junction to case thermal resistance maximum junction temperature storage temperature dc drain current drain to source voltage gate to source voltage -65 c to 150 c c a v load mismatch tolerance vswr drain to gate voltage relative 0.20 0.20 ids = ma, vgs = 0v v, vgs = 0v ciss crss coss vds = idq = a, vds = v, f = 0.20 bvdss idss drain breakdown voltage v ma pf pf pf common source output capacitance common source feedback capacitance idq = idq = 0.20 500 vgs = 20v, ids = rdson saturation resistance forward transconductance gm vds = 10v, vgs = 5v polyfet rf devices 1110 avenida acaso, camarillo, ca 93012 tel:(805) 484-4210 fax: (805) 484-3393 email:sell@polyfet.com url:www.polyfet.com 500 500 common source input capacitance 36 v igss vgs idsat zero bias drain current gate leakage current gate bias for drain current saturation current 25 ua v mho ohm amp parameter symbol min typ max units test conditions electrical characteristics ( each side ) rf characteristics ( 7.0 absolute maximum ratings ( t = gps 7.5 a, vds = v, f = a, vds = v, f = 7.5 7.5 watts v 1 mhz mhz mhz watts package style 7.0 vds = 0v vgs = 30v vgs = 20v, vds = 10v high efficiency, linear high gain, low noise general description 7.5 vds = a, vgs = vds ids = a db % o o o o o silicon vdmos and ldmos transistors designed specifically for broadband rf applications. suitable for military radios, cellular and paging amplifier base stations, broadcast fm/am, mri, laser driver and others. "polyfet" process features low feedback and output capacitances, resulting in high f transistors with high input impedance and high efficiency. tm t silicon gate enhancement mode rf power transistor ldmos vgs = 0v, f = 1 mhz 7.5 vds = vgs = 0v, f = 1 mhz 7.5 vds = vgs = 0v, f = 1 mhz 7.5 revision 10/01/2007 20 25 c ) watts output ) 200 polyfet rf devices l2711 10:1 rohs compliant
l1c 1 die id, gm vs vg 1 10 100 02468101214 vgs in volts id g l1c 1di e capaci tance 1 10 100 1000 0 5 10 15 20 25 30 vds in volts coss ciss crss l2711 pin vs pout f=500 mhz; idq=.4;vds=7.5v 3 4 5 6 7 8 9 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 pin in watts 9 10 11 12 13 efficiency = 55% pout gain polyfet rf devices pout vs pin graph capacitance vs voltage id & gm vs vgs iv curve zin zout package dimensions in inches l2711 l1c 1 die i v 0 2 4 6 8 10 12 14 16 0 2 4 6 8 101214161820 vds in volts id in amps vg=2v vg=4v vg=6v vg=8v vg=10v vg=12v 1110 avenida acaso, camarillo, ca 93012 tel:(805) 484-4210 fax: (805) 484-3393 email:sell@polyfet.com url:www.polyfet.com revision 10/01/2007 tolerance .xx +/-0.01 .xxx +/-.005 inches
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